Shockley-Frank stacking faults in 6H-SiC

Shockley-Frank stacking faults in 6H-SiC

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the exciton...

Optical investigations techniques used for stacking faults characterization in SiC

Stacking Faults (SFs) are important crystal defects in 4H-SiC [1]. They can be electrically active and, in this case, behave as deep quantum well (QW) traps for electrons [2]. This leads to the degradation of high voltage bipolar diodes [3]. The basic origin of SFs in SiC is the small total energy difference between two different polytypes. The net consequence is that they can appear spontaneou...

Structures of 6H-SiC Surfaces

We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...

Stable Stacking Faults Bounded by Frank Partial Dislocations in Al7075 Formed through Precipitate and Dislocation Interactions

Through high-resolution electron microscopy, stacking faults (SFs) due to Frank partial dislocations were found in an aluminum alloy following deformation with low strain and strain rate, while also remaining stable during artificial aging. Extrinsic stacking faults were found surrounded by dislocation areas and precipitates. An intrinsic stacking fault was found between two Guinier-Preston II ...